(Eu,Gd)Te - MBE Growth and Characterization

Fractal terraces in MBE growth

MBE growth on high symmetry surfaces depends to some extent on the shape of the terraces which form the embryos of each new atomic layer. The conditions for formation of compact or fractal terraces are discussed in two limits: large terraces, to which a continuous description applies, and small terraces, which require that the discrete nature of matter be taken into account. In both cases it is...

MBE Growth and Characterization of ZnTe and Nitrogen-doped ZnTe on GaAs(100) Substrates

Parallel Monte Carlo simulation of MBE growth

We present a parallel algorithm for Monte Carlo simulation of molecular beam epitazial growth (MBE) focusing on the software we have developed and the ezperiences gained. An eficient sequential method to do MBE simulation was developed that uses a single binary tree t o store the rates of occwence of all possible events at a given time. The challenge was to find a ioay to adapt this method to a...

Superlattice Growth via MBE and Green’s Function Techniques

A model has been developed to simulate the growth of arrays consisting of a substrate on which alternating layers of quantum dots (QDs) and spacer layers are epitaxially grown. The substrate and spacer layers are modeled as an anisotropic elastic half-space, and the QDs are modeled as point inclusions buried within the half-space. In this model, the strain at the free surface of this half-space...

Photoluminescence characterization of MBE grown Zn 1 ~ x Be x

We report photoluminescence (PL) studies of high-quality Zn 1~x Be x Se "lms grown by molecular beam epitaxy (MBE) on GaAs substrates by use of a novel growth method of Be}Zn co-irradiation before the growth of a thin ZnSe bu!er layer. Samples show double-crystal X-ray linewidth as narrow as 23 arcsec. Low-temperature (13K) PL of undoped samples showed free exciton emission, which de"ned the ba...